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2SK2648-01
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Outline Drawings
TO-3P
FAP-2S Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg Ratings 800 9 36 35 9 241 150 +150 -55 to +150 Unit V A A V A mJ W C C < *2 Tch=150C
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
*1 L=5.46mH, Vcc=80V
Electrical characteristics (Tc =25C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=800V VGS=0V VGS=35V VDS=0V ID=4.5A VGS=10V ID=4.5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=9A VGS=10V RGS=10 L=100 H Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C
Min.
800 3.5
Typ.
Max.
Units
V V A mA nA S pF
4.0 4.5 10 500 0.2 1.0 10 100 1.28 1.50 3.0 6.0 1200 1800 180 270 90 140 30 50 110 170 100 150 65 100 9 1.0 1.5 950 12
ns
A V ns C
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
Min.
Typ.
Max.
0.83 35.0
Units
C/W C/W
1
2SK2648-01
Characteristics
Power Dissipation PD=f(Tc)
10
2
FUJI POWER MOSFET
Safe operating area
ID=f(VDS):D=0.01,Tc=25C
200
150
10
1
t=0.01 s 1s DC 10s 100s
PD [W]
100
ID [A]
10
0
1ms
t t D= T T
50
10ms 100ms
0
0
50
100
150
10
-1
10
0
10
1
10
2
10
3
Tc [ C]
o
VDS [V]
Typical output characteristics
ID=f(VDS):80s Pulse test,Tch=25C
20
Typical transfer characteristic
ID=f(VGS):80s Pulse test,VDS=25V,Tch=25C
VGS=20V 15 10V 8V 10
1
ID [A]
7V 6.5V 6V 5.5V 5V 0 5 10 15 20 25 30 35
ID [A]
10
10
0
5
10
-1
0
10
-2
0
1
2
3
4
5
6
7
8
9
10
VDS [V]
VGS [V]
Typical forward transconductance
gfs=f(ID):80s Pulse test,VDS=25V,Tch=25C
15
Typical drain-source on-state resistance
RDS(on)=f(ID):80s Pulse test, Tch=25C
VGS= 5V 5.5V 6V
10
1
6.5V
7V
10
10
0
RDS(on) [ ]
5
gfs [s]
8V 10V
20V
10
-1
0
10
-1
10
0
10
1
0
5
10
15
20
ID [A]
ID [A]
2
2SK2648-01
FUJI POWER MOSFET
Drain-source on-state resistance RDS(on)=f(Tch):ID=4.5A,VGS=10V
Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS
6.0
4
5.0 max. 4.0 typ. min. 3.0
RDS(on) [ ]
max. 2 typ.
VGS(th) [V]
2.0
1.0
0 -50 0 50 100 150
o
0.0
-50
0
50
100
o
150
Tch [ C]
Tch [ C]
Typical gate charge characteristic
VGS=f(Qg):ID=9A,Tch=25C
800 700 Vcc=640V 600 500 400V 400 300 200 160V 100 0 20 15 40
10n
Typical capacitances C=f(VDS):VGS=0V,f=1MHz
V 35 60 =1 cc 0V V 40 0V 30 64
1n
25
Ciss
VDS [V]
VGS [V]
C [F]
Coss
100p
Crss
10 5 0 180
10p 10
0
20
40
60
80
100
120
140
160
-2
10
-1
10
0
10
1
10
2
Qg [nC]
VDS [V]
Forward characteristic of reverse of diode
IF=f(VSD):80s Pulse test,VGS=0V
10
1
Tch=25 C typ.
o
IF [A]
10
0
10
-1
10
-2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD [V]
3
2SK2648-01
FUJI POWER MOSFET
10
1
Transient thermal impedande Zthch=f(t) parameter:D=t/T
Zthch-c [K/W]
10
0
D=0.5 0.2 10
-1
0.1 0.05 0.02 0 0.01
-4 -3 -2 -1
t D= T t T
10 -5 10
-2
10
10
10
10
10
0
10
1
t [s]
4

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